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R6020JNZC8

R6020JNZC8 Rohm Semiconductor


Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+626.74 грн
10+411.63 грн
В кошику  од. на суму  грн.
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Технічний опис R6020JNZC8 Rohm Semiconductor

Description: MOSFET N-CH 600V 20A TO3PF, Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Obsolete, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 7V @ 3.5mA, Power Dissipation (Max): 76W (Tc), Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).