Технічний опис R6020YNXC7G ROHM Semiconductor
Description: ROHM - R6020YNXC7G - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.185 ohm, TO-220FM, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 12A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 5V, Verlustleistung: 62W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-220FM, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 12V, Drain-Source-Durchgangswiderstand: 0.185ohm.
Інші пропозиції R6020YNXC7G за ціною від 52.20 грн до 225.51 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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R6020YNXC7G | Rohm Semiconductor |
 Description: 600V 12A TO-220FM, FAST SWITCHINFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Part Status: Active Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 6V @ 1.65mA Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
на замовлення 1048 шт: термін постачання 21-31 дні (днів) |
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R6020YNXC7G | ROHM |
Description: ROHM - R6020YNXC7G - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.185 ohm, TO-220FM, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 62W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220FM Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 12V Drain-Source-Durchgangswiderstand: 0.185ohm |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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| R6020YNXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 12A TO-220FM, FAST SWITCHIN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Description: 600V 12A TO-220FM, FAST SWITCHIN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
на замовлення 1048 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.30 грн |
| 50+ | 83.46 грн |
| 100+ | 75.06 грн |
| 500+ | 56.64 грн |
| 1000+ | 52.20 грн |
| R6020YNXC7G |
|
Виробник: ROHM
Description: ROHM - R6020YNXC7G - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.185 ohm, TO-220FM, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 62W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220FM
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 12V
Drain-Source-Durchgangswiderstand: 0.185ohm
Description: ROHM - R6020YNXC7G - Leistungs-MOSFET, n-Kanal, 600 V, 12 A, 0.185 ohm, TO-220FM, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 62W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220FM
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 12V
Drain-Source-Durchgangswiderstand: 0.185ohm
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 225.51 грн |
| 10+ | 153.83 грн |