Технічний опис R6020YNZ4C13 ROHM Semiconductor
Description: ROHM - R6020YNZ4C13 - Leistungs-MOSFET, n-Kanal, 600 V, 20 A, 0.185 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 20A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 6V, euEccn: NLR, Verlustleistung: 182W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 12V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.185ohm, SVHC: To Be Advised.
Інші пропозиції R6020YNZ4C13 за ціною від 108.31 грн до 413.17 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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R6020YNZ4C13 | Rohm Semiconductor |
 Description: NCH 600V 20A, TO-247, POWER MOSFInput Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 6V @ 1.65mA Power Dissipation (Max): 182W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 563 шт: термін постачання 21-31 дні (днів) |
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R6020YNZ4C13 | ROHM |
Description: ROHM - R6020YNZ4C13 - Leistungs-MOSFET, n-Kanal, 600 V, 20 A, 0.185 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V euEccn: NLR Verlustleistung: 182W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.185ohm SVHC: To Be Advised |
на замовлення 115 шт: термін постачання 21-31 дні (днів) |
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| R6020YNZ4C13 |
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Виробник: Rohm Semiconductor
Description: NCH 600V 20A, TO-247, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: NCH 600V 20A, TO-247, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 563 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 314.54 грн |
| 30+ | 167.35 грн |
| 120+ | 137.40 грн |
| 510+ | 108.31 грн |
| R6020YNZ4C13 |
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Виробник: ROHM
Description: ROHM - R6020YNZ4C13 - Leistungs-MOSFET, n-Kanal, 600 V, 20 A, 0.185 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 6V
euEccn: NLR
Verlustleistung: 182W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.185ohm
SVHC: To Be Advised
Description: ROHM - R6020YNZ4C13 - Leistungs-MOSFET, n-Kanal, 600 V, 20 A, 0.185 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 6V
euEccn: NLR
Verlustleistung: 182W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.185ohm
SVHC: To Be Advised
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 413.17 грн |
| 10+ | 250.48 грн |
| 100+ | 205.38 грн |