R6022YNX3C16 ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFETs Nch 600V 22A, TO-220AB, Power MOSFET: R6022YNX3 is a power MOSFET with low on - resistance, suitable for switching.
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.50 грн |
| 10+ | 197.68 грн |
| 25+ | 169.82 грн |
| 100+ | 123.57 грн |
| 500+ | 101.48 грн |
| 1000+ | 100.10 грн |
| 2000+ | 94.58 грн |
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Технічний опис R6022YNX3C16 ROHM Semiconductor
Description: NCH 600V 22A, TO-220AB, POWER MO, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 6V @ 1.8mA, Power Dissipation (Max): 205W (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції R6022YNX3C16 за ціною від 105.09 грн до 305.99 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6022YNX3C16 | Rohm Semiconductor |
Description: NCH 600V 22A, TO-220AB, POWER MO Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 6V @ 1.8mA Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
|
| R6022YNX3C16 |
|
Виробник: Rohm Semiconductor
Description: NCH 600V 22A, TO-220AB, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: NCH 600V 22A, TO-220AB, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.99 грн |
| 10+ | 193.70 грн |
| 100+ | 136.42 грн |
| 500+ | 105.09 грн |