Технічний опис R6022YNZ4C13 ROHM Semiconductor
Description: ROHM - R6022YNZ4C13 - Leistungs-MOSFET, n-Kanal, 600 V, 22 A, 0.165 ohm, TO-247G, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 600V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 22A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 6V, Verlustleistung: 205W, SVHC: To Be Advised, Bauform - Transistor: TO-247G, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 12V, Drain-Source-Durchgangswiderstand: 0.165ohm.
Інші пропозиції R6022YNZ4C13 за ціною від 109.83 грн до 440.55 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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R6022YNZ4C13 | Rohm Semiconductor |
 Description: NCH 600V 22A, TO-247, POWER MOSFInput Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: TO-247G Vgs(th) (Max) @ Id: 6V @ 1.8mA Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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R6022YNZ4C13 | ROHM |
Description: ROHM - R6022YNZ4C13 - Leistungs-MOSFET, n-Kanal, 600 V, 22 A, 0.165 ohm, TO-247G, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 22A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 6V Verlustleistung: 205W SVHC: To Be Advised Bauform - Transistor: TO-247G Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 12V Drain-Source-Durchgangswiderstand: 0.165ohm |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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| R6022YNZ4C13 |
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Виробник: Rohm Semiconductor
Description: NCH 600V 22A, TO-247, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: TO-247G
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: NCH 600V 22A, TO-247, POWER MOSF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: TO-247G
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 317.64 грн |
| 30+ | 169.17 грн |
| 120+ | 139.10 грн |
| 510+ | 109.83 грн |
| R6022YNZ4C13 |
|
Виробник: ROHM
Description: ROHM - R6022YNZ4C13 - Leistungs-MOSFET, n-Kanal, 600 V, 22 A, 0.165 ohm, TO-247G, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 22A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 6V
Verlustleistung: 205W
SVHC: To Be Advised
Bauform - Transistor: TO-247G
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 12V
Drain-Source-Durchgangswiderstand: 0.165ohm
Description: ROHM - R6022YNZ4C13 - Leistungs-MOSFET, n-Kanal, 600 V, 22 A, 0.165 ohm, TO-247G, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 22A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 6V
Verlustleistung: 205W
SVHC: To Be Advised
Bauform - Transistor: TO-247G
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 12V
Drain-Source-Durchgangswiderstand: 0.165ohm
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 440.55 грн |
| 10+ | 277.86 грн |
| 100+ | 212.62 грн |