R6025FNZ1C9

Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

Виробник: ROHM Semiconductor
MOSFET 10V Drive Nch MOSFET