R6030ENZ4C13 ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFETs Nch 600V 30A Power MOSFET. R6030ENZ4 is a power MOSFET for switching applications.
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 702.31 грн |
| 10+ | 655.75 грн |
| 25+ | 376.93 грн |
| 100+ | 348.62 грн |
| 250+ | 327.91 грн |
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Технічний опис R6030ENZ4C13 ROHM Semiconductor
Description: MOSFET N-CH 600V 30A TO247, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 305W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції R6030ENZ4C13 за ціною від 768.87 грн до 768.87 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
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R6030ENZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO247 Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 305W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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| R6030ENZ4C13 |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 768.87 грн |