R6049YNZ4C13 ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFETs Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching.
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 528.34 грн |
| 10+ | 283.42 грн |
| 100+ | 222.29 грн |
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Технічний опис R6049YNZ4C13 ROHM Semiconductor
Description: NCH 600V 49A, TO-247G, POWER MOS, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V, Power Dissipation (Max): 448W (Tc), Vgs(th) (Max) @ Id: 6V @ 2.9mA, Supplier Device Package: TO-247G, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V.
Інші пропозиції R6049YNZ4C13 за ціною від 218.19 грн до 575.49 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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R6049YNZ4C13 | Rohm Semiconductor |
Description: NCH 600V 49A, TO-247G, POWER MOS Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V Power Dissipation (Max): 448W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.9mA Supplier Device Package: TO-247G Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V |
на замовлення 590 шт: термін постачання 21-31 дні (днів) |
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| R6049YNZ4C13 |
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Виробник: Rohm Semiconductor
Description: NCH 600V 49A, TO-247G, POWER MOS
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
Description: NCH 600V 49A, TO-247G, POWER MOS
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
на замовлення 590 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 575.49 грн |
| 10+ | 370.57 грн |
| 30+ | 314.40 грн |
| 120+ | 246.55 грн |
| 270+ | 225.20 грн |
| 510+ | 218.19 грн |