R6050JNZ4C13 Rohm Semiconductor

Description: MOSFET N-CH 600V 50A TO247G, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 15 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247G, Vgs(th) (Max) @ Id: 7V @ 5mA, Power Dissipation (Max): 615W (Tc), Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.