Технічний опис R6504KNXC7G ROHM Semiconductor
Description: 650V 4A TO-220FM, HIGH-SPEED SWI, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 5V @ 130µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції R6504KNXC7G за ціною від 87.34 грн до 172.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6504KNXC7G | Rohm Semiconductor |
 Description: 650V 4A TO-220FM, HIGH-SPEED SWIDrive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 130µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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| R6504KNXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 4A TO-220FM, HIGH-SPEED SWI
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: 650V 4A TO-220FM, HIGH-SPEED SWI
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.41 грн |
| 50+ | 133.67 грн |
| 100+ | 109.99 грн |
| 500+ | 87.34 грн |