R6509ENJTL Rohm Semiconductor

Description: MOSFET N-CH 650V 9A LPTS, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 4V @ 230µA, Power Dissipation (Max): 94W (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).