R6511END3TL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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Технічний опис R6511END3TL1 Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V, Power Dissipation (Max): 124W (Tc), Vgs(th) (Max) @ Id: 4V @ 320µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Інші пропозиції R6511END3TL1 за ціною від 77.32 грн до 244.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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R6511END3TL1 | Rohm Semiconductor |
Description: 650V 11A TO-252, LOW-NOISE POWERPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 3267 шт: термін постачання 21-31 дні (днів) |
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R6511END3TL1 | ROHM Semiconductor |
MOSFETs 650V 11A TO-252, Low-noise Power MOSFET |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
|
| R6511END3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 3267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.88 грн |
| 10+ | 157.88 грн |
| 100+ | 110.10 грн |
| 500+ | 84.18 грн |
| 1000+ | 78.03 грн |
| R6511END3TL1 |
![]() |
Виробник: ROHM Semiconductor
MOSFETs 650V 11A TO-252, Low-noise Power MOSFET
MOSFETs 650V 11A TO-252, Low-noise Power MOSFET
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.84 грн |
| 10+ | 168.31 грн |
| 100+ | 104.93 грн |
| 250+ | 100.10 грн |
| 500+ | 85.60 грн |
| 1000+ | 79.39 грн |
| 2500+ | 77.32 грн |


