R6515ENJTL ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFET Nch 650V 15A Power MOSFET. R6515ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| Кількість | Ціна |
|---|---|
| 1+ | 423.36 грн |
| 10+ | 375.26 грн |
| 100+ | 267.94 грн |
| 500+ | 232.07 грн |
| 1000+ | 192.69 грн |
| 2000+ | 182.14 грн |
| 10000+ | 179.33 грн |
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Технічний опис R6515ENJTL ROHM Semiconductor
Description: MOSFET N-CH 650V 15A LPTS, Vgs(th) (Max) @ Id: 4V @ 430µA, Power Dissipation (Max): 184W (Tc), Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LPTS.
Інші пропозиції R6515ENJTL за ціною від 220.12 грн до 471.53 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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R6515ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 15A LPTS Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 4V @ 430µA Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| R6515ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 471.53 грн |
| 10+ | 304.74 грн |
| 100+ | 220.12 грн |