R6520ENJTL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 20A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 439.57 грн |
| 10+ | 355.54 грн |
| 100+ | 287.58 грн |
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Технічний опис R6520ENJTL Rohm Semiconductor
Description: MOSFET N-CH 650V 20A LPTS, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 4V @ 630µA, Power Dissipation (Max): 231W (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції R6520ENJTL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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R6520ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 20A LPTS Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 4V @ 630µA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
R6520ENJTL | ROHM Semiconductor |
MOSFET Nch 650V 20A Power MOSFET. R6520ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| R6520ENJTL |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 20A LPTS
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 650V 20A LPTS
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6520ENJTL |
|
Виробник: ROHM Semiconductor
MOSFET Nch 650V 20A Power MOSFET. R6520ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
MOSFET Nch 650V 20A Power MOSFET. R6520ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.