R6524KNX3C16 Rohm Semiconductor

Description: 650V 24A, TO-220AB, HIGH-SPEED S, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 5V @ 750µA, Power Dissipation (Max): 253W (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tape & Reel (TR).