R6524KNZC17 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 444.58 грн |
| 10+ | 368.37 грн |
| 25+ | 234.03 грн |
| 100+ | 197.44 грн |
| 300+ | 185.01 грн |
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Технічний опис R6524KNZC17 ROHM Semiconductor
Description: MOSFET N-CH 650V 24A TO3, Package / Case: TO-3P-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 750µA, Power Dissipation (Max): 74W (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole.
Інші пропозиції R6524KNZC17 за ціною від 350.81 грн до 494.72 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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R6524KNZC17 | Rohm Semiconductor |
 Description: MOSFET N-CH 650V 24A TO3Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 750µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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| R6524KNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 650V 24A TO3
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 494.72 грн |
| 10+ | 428.16 грн |
| 100+ | 350.81 грн |