R6530ENZ4C13 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 274.64 грн |
| 10+ | 219.11 грн |
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Технічний опис R6530ENZ4C13 ROHM Semiconductor
Description: 650V 30A TO-247, LOW-NOISE POWER, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247G, Vgs(th) (Max) @ Id: 4V @ 960µA, Power Dissipation (Max): 305W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції R6530ENZ4C13 за ціною від 206.51 грн до 284.25 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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R6530ENZ4C13 | Rohm Semiconductor |
 Description: 650V 30A TO-247, LOW-NOISE POWERInput Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247G Vgs(th) (Max) @ Id: 4V @ 960µA Power Dissipation (Max): 305W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 466 шт: термін постачання 21-31 дні (днів) |
|
| R6530ENZ4C13 |
|
Виробник: Rohm Semiconductor
Description: 650V 30A TO-247, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247G
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: 650V 30A TO-247, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247G
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 284.25 грн |
| 30+ | 211.27 грн |
| 120+ | 206.51 грн |