R6547ENZ4C13 ROHM Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 629.30 грн |
| 25+ | 397.90 грн |
| 100+ | 329.83 грн |
| 250+ | 329.12 грн |
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Технічний опис R6547ENZ4C13 ROHM Semiconductor
Description: 650V 47A TO-247, LOW-NOISE POWER, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247G, Vgs(th) (Max) @ Id: 4V @ 1.72mA, Power Dissipation (Max): 480W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції R6547ENZ4C13 за ціною від 354.10 грн до 715.21 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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R6547ENZ4C13 | Rohm Semiconductor |
 Description: 650V 47A TO-247, LOW-NOISE POWERInput Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247G Vgs(th) (Max) @ Id: 4V @ 1.72mA Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 324 шт: термін постачання 21-31 дні (днів) |
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| R6547ENZ4C13 |
|
Виробник: Rohm Semiconductor
Description: 650V 47A TO-247, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247G
Vgs(th) (Max) @ Id: 4V @ 1.72mA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: 650V 47A TO-247, LOW-NOISE POWER
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247G
Vgs(th) (Max) @ Id: 4V @ 1.72mA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 324 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 715.21 грн |
| 30+ | 402.14 грн |
| 120+ | 354.10 грн |