R8001CND3FRATL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 1A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Технічний опис R8001CND3FRATL Rohm Semiconductor
Description: MOSFET N-CH 800V 1A TO252, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 5.5V @ 1mA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.
Інші пропозиції R8001CND3FRATL за ціною від 67.10 грн до 235.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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R8001CND3FRATL | Rohm Semiconductor |
Description: MOSFET N-CH 800V 1A TO252Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2574 шт: термін постачання 21-31 дні (днів) |
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R8001CND3FRATL | ROHM Semiconductor |
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect |
на замовлення 3126 шт: термін постачання 21-30 дні (днів) |
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| R8001CND3FRATL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 1A TO252
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 800V 1A TO252
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.50 грн |
| 10+ | 164.01 грн |
| 100+ | 131.80 грн |
| 500+ | 101.62 грн |
| 1000+ | 84.20 грн |
| R8001CND3FRATL |
![]() |
Виробник: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect
на замовлення 3126 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 235.18 грн |
| 10+ | 150.05 грн |
| 100+ | 91.12 грн |
| 500+ | 73.87 грн |
| 1000+ | 71.80 грн |
| 2500+ | 67.10 грн |


