R8002CND3FRATL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 2A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис R8002CND3FRATL Rohm Semiconductor
Description: ROHM - R8002CND3FRATL - Leistungs-MOSFET, n-Kanal, 800 V, 2 A, 4.3 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 800V, rohsCompliant: YES, Dauer-Drainstrom Id: 2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, usEccn: EAR99, Verlustleistung Pd: 69W, Gate-Source-Schwellenspannung, max.: 5.5V, euEccn: NLR, Verlustleistung: 69W, Bauform - Transistor: TO-252 (DPAK), Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 3.3ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 4.3ohm, SVHC: Lead (23-Jan-2024).
Інші пропозиції R8002CND3FRATL за ціною від 73.18 грн до 284.25 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
R8002CND3FRATL | ROHM |
Description: ROHM - R8002CND3FRATL - Leistungs-MOSFET, n-Kanal, 800 V, 2 A, 4.3 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Verlustleistung Pd: 69W Gate-Source-Schwellenspannung, max.: 5.5V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: TO-252 (DPAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 3.3ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4.3ohm SVHC: Lead (23-Jan-2024) |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
|
R8002CND3FRATL | ROHM |
Description: ROHM - R8002CND3FRATL - Leistungs-MOSFET, n-Kanal, 800 V, 2 A, 4.3 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.5V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4.3ohm SVHC: Lead (23-Jan-2024) |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
R8002CND3FRATL | ROHM Semiconductor |
MOSFETs TO252 800V 2A N-CH |
на замовлення 2857 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
R8002CND3FRATL | Rohm Semiconductor |
Description: MOSFET N-CH 800V 2A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 7196 шт: термін постачання 21-31 дні (днів) |
|
| R8002CND3FRATL |
|
Виробник: ROHM
Description: ROHM - R8002CND3FRATL - Leistungs-MOSFET, n-Kanal, 800 V, 2 A, 4.3 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Verlustleistung Pd: 69W
Gate-Source-Schwellenspannung, max.: 5.5V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TO-252 (DPAK)
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 3.3ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.3ohm
SVHC: Lead (23-Jan-2024)
Description: ROHM - R8002CND3FRATL - Leistungs-MOSFET, n-Kanal, 800 V, 2 A, 4.3 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Verlustleistung Pd: 69W
Gate-Source-Schwellenspannung, max.: 5.5V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TO-252 (DPAK)
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 3.3ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.3ohm
SVHC: Lead (23-Jan-2024)
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 116.78 грн |
| 500+ | 85.26 грн |
| 1000+ | 73.18 грн |
| R8002CND3FRATL |
|
Виробник: ROHM
Description: ROHM - R8002CND3FRATL - Leistungs-MOSFET, n-Kanal, 800 V, 2 A, 4.3 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.5V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.3ohm
SVHC: Lead (23-Jan-2024)
Description: ROHM - R8002CND3FRATL - Leistungs-MOSFET, n-Kanal, 800 V, 2 A, 4.3 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.5V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.3ohm
SVHC: Lead (23-Jan-2024)
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 217.46 грн |
| 10+ | 150.61 грн |
| 100+ | 116.78 грн |
| 500+ | 85.26 грн |
| 1000+ | 73.18 грн |
| R8002CND3FRATL |
|
Виробник: ROHM Semiconductor
MOSFETs TO252 800V 2A N-CH
MOSFETs TO252 800V 2A N-CH
на замовлення 2857 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.56 грн |
| 10+ | 164.34 грн |
| 100+ | 109.07 грн |
| 500+ | 91.12 грн |
| 1000+ | 86.98 грн |
| R8002CND3FRATL |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 2A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 800V 2A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 7196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 284.25 грн |
| 10+ | 179.19 грн |
| 100+ | 125.64 грн |
| 500+ | 96.43 грн |
| 1000+ | 89.53 грн |