R8005ANJFRGTL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис R8005ANJFRGTL Rohm Semiconductor
Description: ROHM - R8005ANJFRGTL - Leistungs-MOSFET, n-Kanal, 800 V, 5 A, 2.1 ohm, TO-263S, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 800V, rohsCompliant: YES, Dauer-Drainstrom Id: 5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Verlustleistung Pd: 120W, Gate-Source-Schwellenspannung, max.: 5V, Verlustleistung: 120W, SVHC: Lead (23-Jan-2024), Bauform - Transistor: TO-263S, Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Wandlerpolarität: n-Kanal, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 1.6ohm, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 2.1ohm.
Інші пропозиції R8005ANJFRGTL
| Фото | Назва | Виробник | Інформація | Доступність | _PRICE_WITHOUT_VAT | ||||||||||||
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R8005ANJFRGTL | ROHM |
Description: ROHM - R8005ANJFRGTL - Leistungs-MOSFET, n-Kanal, 800 V, 5 A, 2.1 ohm, TO-263S, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Verlustleistung Pd: 120W Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 120W SVHC: Lead (23-Jan-2024) Bauform - Transistor: TO-263S Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal usEccn: EAR99 Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.6ohm Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2.1ohm |
на замовлення 897 шт: термін постачання 21-31 дні (днів) |
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R8005ANJFRGTL | Rohm Semiconductor |
Description: MOSFET N-CH 800V 5A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1848 шт: термін постачання 21-31 дні (днів) |
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R8005ANJFRGTL | ROHM |
Description: ROHM - R8005ANJFRGTL - Leistungs-MOSFET, n-Kanal, 800 V, 5 A, 2.1 ohm, TO-263S, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 120W SVHC: Lead (23-Jan-2024) Bauform - Transistor: TO-263S Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2.1ohm |
на замовлення 897 шт: термін постачання 21-31 дні (днів) |
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R8005ANJFRGTL | ROHM Semiconductor |
MOSFETs Nch 800V Vdss 5A ID TO-263(D2PAK); LPTS |
на замовлення 1002 шт: термін постачання 21-30 дні (днів) |
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| R8005ANJFRGTL |
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Виробник: ROHM
Description: ROHM - R8005ANJFRGTL - Leistungs-MOSFET, n-Kanal, 800 V, 5 A, 2.1 ohm, TO-263S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Verlustleistung Pd: 120W
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 120W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-263S
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 1.6ohm
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2.1ohm
Description: ROHM - R8005ANJFRGTL - Leistungs-MOSFET, n-Kanal, 800 V, 5 A, 2.1 ohm, TO-263S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Verlustleistung Pd: 120W
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 120W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-263S
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 1.6ohm
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2.1ohm
на замовлення 897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 118.39 грн |
| 500+ | 93.48 грн |
| R8005ANJFRGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1848 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 158.43 грн |
| 10+ | 128.78 грн |
| 100+ | 102.73 грн |
| R8005ANJFRGTL |
![]() |
Виробник: ROHM
Description: ROHM - R8005ANJFRGTL - Leistungs-MOSFET, n-Kanal, 800 V, 5 A, 2.1 ohm, TO-263S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 120W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-263S
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2.1ohm
Description: ROHM - R8005ANJFRGTL - Leistungs-MOSFET, n-Kanal, 800 V, 5 A, 2.1 ohm, TO-263S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 120W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-263S
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2.1ohm
на замовлення 897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 250.48 грн |
| 10+ | 171.55 грн |
| 100+ | 118.39 грн |
| 500+ | 93.48 грн |
| R8005ANJFRGTL |
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Виробник: ROHM Semiconductor
MOSFETs Nch 800V Vdss 5A ID TO-263(D2PAK); LPTS
MOSFETs Nch 800V Vdss 5A ID TO-263(D2PAK); LPTS
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 300.41 грн |
| 10+ | 196.89 грн |
| 100+ | 124.26 грн |
| 500+ | 105.62 грн |
| 1000+ | 100.79 грн |
| 2000+ | 99.41 грн |



