RAL045P01TCR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Технічний опис RAL045P01TCR Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TUMT6, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): -8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції RAL045P01TCR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RAL045P01TCR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4.5A TUMT6 Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): -8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
RAL045P01TCR | ROHM Semiconductor |
MOSFET 1.5V DRIVE MOSFET PCH |
товару немає в наявності |
В кошику од. на суму грн. |
| RAL045P01TCR |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V 4.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RAL045P01TCR |
|
Виробник: ROHM Semiconductor
MOSFET 1.5V DRIVE MOSFET PCH
MOSFET 1.5V DRIVE MOSFET PCH
товару немає в наявності
В кошику
од. на суму грн.