
RB088NS100FHTL Rohm Semiconductor

Description: DIODE ARR SCHOTT 100V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11.8 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
4+ | 99.24 грн |
10+ | 78.36 грн |
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Технічний опис RB088NS100FHTL Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 10A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 11.8 ns, Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: LPDS, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RB088NS100FHTL за ціною від 49.91 грн до 100.18 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
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RB088NS100FHTL | Виробник : ROHM Semiconductor |
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на замовлення 754 шт: термін постачання 21-30 дні (днів) |
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RB088NS100FHTL | Виробник : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11.8 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |