RB160M-50TR ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.96 грн |
| 10+ | 64.86 грн |
| 3000+ | 10.84 грн |
| 6000+ | 10.70 грн |
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Технічний опис RB160M-50TR ROHM Semiconductor
Description: DIODE SCHOTTKY 30V 1A, Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 30 V, Part Status: Not For New Designs, Operating Temperature - Junction: 150°C (Max), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 170pF @ 1V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Packaging: Tape & Reel (TR).
Інші пропозиції RB160M-50TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
RB160M-50TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 170pF @ 1V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
RB160M-50TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 1A Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 170pF @ 1V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| RB160M-50TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RB160M-50TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 1A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.