RBA100N04DANS-4UA02#HB0 Renesas Electronics Corporation

Description: RBA100N04DANS-4UA02#HB0, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V, Qualification: AEC-Q101.