RBA200N15YANS-3UA03#GB0 RENESAS
Виробник: RENESAS
Description: RENESAS - RBA200N15YANS-3UA03#GB0 - Leistungs-MOSFET, n-Kanal, 150 V, 200 A, 0.0034 ohm, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.7V
euEccn: NLR
Verlustleistung: 366W
Bauform - Transistor: TOLL
Anzahl der Pins: 9Pin(s)
Produktpalette: REXFET-1 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0034ohm
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 2+ | 602.25 грн |
| 5+ | 507.54 грн |
| 10+ | 412.02 грн |
| 50+ | 342.00 грн |
| 100+ | 278.23 грн |
| 250+ | 272.68 грн |
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Технічний опис RBA200N15YANS-3UA03#GB0 RENESAS
Description: RENESAS - RBA200N15YANS-3UA03#GB0 - Leistungs-MOSFET, n-Kanal, 150 V, 200 A, 0.0034 ohm, TOLL, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 150V, rohsCompliant: YES, Dauer-Drainstrom Id: 200A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.7V, euEccn: NLR, Verlustleistung: 366W, Bauform - Transistor: TOLL, Anzahl der Pins: 9Pin(s), Produktpalette: REXFET-1 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0034ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції RBA200N15YANS-3UA03#GB0
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RBA200N15YANS-3UA03#GB0 | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 150V 200A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 366W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TOLL Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |
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| RBA200N15YANS-3UA03#GB0 | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 150V 200A TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 366W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TOLL Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |