RBA200N15YAPF-6UA03#KB0 Renesas Electronics
| Кількість | Ціна |
|---|---|
| 1+ | 518.94 грн |
| 10+ | 395.08 грн |
| 25+ | 318.41 грн |
| 100+ | 289.78 грн |
| 250+ | 276.52 грн |
| 500+ | 268.84 грн |
| 1300+ | 259.06 грн |
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Технічний опис RBA200N15YAPF-6UA03#KB0 Renesas Electronics
Description: RENESAS - RBA200N15YAPF-6UA03#KB0 - Leistungs-MOSFET, n-Kanal, 150 V, 200 A, 0.0034 ohm, TOLT, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 150V, rohsCompliant: YES, Dauer-Drainstrom Id: 200A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.7V, euEccn: NLR, Verlustleistung: 366W, Bauform - Transistor: TOLT, Anzahl der Pins: 16Pin(s), Produktpalette: REXFET-1 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0034ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції RBA200N15YAPF-6UA03#KB0 за ціною від 286.99 грн до 637.09 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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RBA200N15YAPF-6UA03#KB0 | RENESAS |
 Description: RENESAS - RBA200N15YAPF-6UA03#KB0 - Leistungs-MOSFET, n-Kanal, 150 V, 200 A, 0.0034 ohm, TOLT, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.7V euEccn: NLR Verlustleistung: 366W Bauform - Transistor: TOLT Anzahl der Pins: 16Pin(s) Produktpalette: REXFET-1 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
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| RBA200N15YAPF-6UA03#KB0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 150V 200A TOLT Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TOLT Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V Qualification: AEC-Q101 |
на замовлення 1285 шт: термін постачання 21-31 дні (днів) |
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| RBA200N15YAPF-6UA03#KB0 |
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Виробник: RENESAS
Description: RENESAS - RBA200N15YAPF-6UA03#KB0 - Leistungs-MOSFET, n-Kanal, 150 V, 200 A, 0.0034 ohm, TOLT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.7V
euEccn: NLR
Verlustleistung: 366W
Bauform - Transistor: TOLT
Anzahl der Pins: 16Pin(s)
Produktpalette: REXFET-1 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0034ohm
SVHC: No SVHC (25-Jun-2025)
Description: RENESAS - RBA200N15YAPF-6UA03#KB0 - Leistungs-MOSFET, n-Kanal, 150 V, 200 A, 0.0034 ohm, TOLT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 200A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.7V
euEccn: NLR
Verlustleistung: 366W
Bauform - Transistor: TOLT
Anzahl der Pins: 16Pin(s)
Produktpalette: REXFET-1 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0034ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 628.10 грн |
| 5+ | 528.71 грн |
| 10+ | 429.32 грн |
| 50+ | 357.81 грн |
| 100+ | 292.58 грн |
| 250+ | 286.99 грн |
| RBA200N15YAPF-6UA03#KB0 |
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Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 150V 200A TOLT
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLT
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 200A TOLT
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLT
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
на замовлення 1285 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 637.09 грн |
| 10+ | 419.54 грн |
| 100+ | 311.33 грн |