RBA40N10EANS-5UA11#HB0 RENESAS
Виробник: RENESAS
Description: RENESAS - RBA40N10EANS-5UA11#HB0 - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.0111 ohm, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 57W
Anzahl der Pins: 8Pin(s)
Produktpalette: REXFET-1 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0111ohm
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 7+ | 116.56 грн |
| 11+ | 74.23 грн |
| 100+ | 49.46 грн |
| 500+ | 36.23 грн |
| 1000+ | 30.46 грн |
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Технічний опис RBA40N10EANS-5UA11#HB0 RENESAS
Description: MOSFET N-CH 100V 40A SO8-FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 28µA, Supplier Device Package: μSO8-FL, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції RBA40N10EANS-5UA11#HB0 за ціною від 27.82 грн до 131.94 грн
| Фото | Назва | Виробник | Інформація |
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RBA40N10EANS-5UA11#HB0 | Виробник : Renesas Electronics |
MOSFETs Auto. MOS REXFET-1 100V 11.1mohm 3x3pkg |
на замовлення 1400 шт: термін постачання 21-30 дні (днів) |
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| RBA40N10EANS-5UA11#HB0 | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 40A SO8-FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 28µA Supplier Device Package: μSO8-FL Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
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| RBA40N10EANS-5UA11#HB0 | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 100V 40A SO8-FL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 28µA Supplier Device Package: μSO8-FL Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |