RBE034N15R1SZQ4#GB0 Renesas Electronics Corporation


rbe034n15r1szq4-datasheet?queryID=b912dcfdceba631e4baf3ddc9e83cb0a
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 150V 200A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 366W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
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Технічний опис RBE034N15R1SZQ4#GB0 Renesas Electronics Corporation

Description: MOSFET N-CH 150V 200A TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Power Dissipation (Max): 366W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V.

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RBE034N15R1SZQ4#GB0 Виробник : Renesas Electronics Corporation rbe034n15r1szq4-datasheet?queryID=b912dcfdceba631e4baf3ddc9e83cb0a Description: MOSFET N-CH 150V 200A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 366W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
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