RBK04U04GNS-0000#HBH Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: POWER TRS2 LIB 8P HVSON ANL4 OTH
Supplier Device Package: 8-HSON (5x6)
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 83W (Tc)
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
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Технічний опис RBK04U04GNS-0000#HBH Renesas Electronics Corporation
Description: POWER TRS2 LIB 8P HVSON ANL4 OTH, Supplier Device Package: 8-HSON (5x6), Vgs(th) (Max) @ Id: 4V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V, Rds On (Max) @ Id, Vgs: 1.5mOhm @ 18A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V, Operating Temperature: 150°C, Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Drain to Source Voltage (Vdss): 40V, Power - Max: 83W (Tc), Technology: MOSFET (Metal Oxide), Packaging: Tape & Reel (TR).
Інші пропозиції RBK04U04GNS-0000#HBH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RBK04U04GNS-0000#HBH | Виробник : Renesas Electronics |
MOSFETs Nch Power MOSFET 40V 35A 1.5mohm SON-8 5x6 |
товару немає в наявності |