RBN40H65T1FPQ-A0#CB0 Renesas Electronics
| Кількість | Ціна |
|---|---|
| 1+ | 482.83 грн |
| 10+ | 448.69 грн |
| 25+ | 330.94 грн |
| 100+ | 305.17 грн |
| 250+ | 254.30 грн |
| 500+ | 212.50 грн |
| 1000+ | 211.11 грн |
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Технічний опис RBN40H65T1FPQ-A0#CB0 Renesas Electronics
Description: IGBT TRENCH 650V 80A TO-247A, Power - Max: 185 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 80 A, Gate Charge: 28 nC, Test Condition: 400V, 40A, 16Ohm, 15V, Switching Energy: 620µJ (on), 520µJ (off), Td (on/off) @ 25°C: 22ns/96ns, IGBT Type: Trench, Supplier Device Package: TO-247A, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Reverse Recovery Time (trr): 55 ns, Input Type: Standard, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції RBN40H65T1FPQ-A0#CB0
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RBN40H65T1FPQ-A0#CB0 | Виробник : Renesas Electronics Corporation |
 Description: IGBT TRENCH 650V 80A TO-247APower - Max: 185 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Gate Charge: 28 nC Test Condition: 400V, 40A, 16Ohm, 15V Switching Energy: 620µJ (on), 520µJ (off) Td (on/off) @ 25°C: 22ns/96ns IGBT Type: Trench Supplier Device Package: TO-247A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Reverse Recovery Time (trr): 55 ns Input Type: Standard Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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