RBN75H65T1FPQ-A0#CB0

RBN75H65T1FPQ-A0#CB0 Renesas Electronics Corporation


rbn75h65t1fpq-a0-datasheet Виробник: Renesas Electronics Corporation
Description: ABU / IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/113ns
Switching Energy: 1.6mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 16Ohm, 15V
Gate Charge: 54 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 312 W
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Технічний опис RBN75H65T1FPQ-A0#CB0 Renesas Electronics Corporation

Description: ABU / IGBT, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 72 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 29ns/113ns, Switching Energy: 1.6mJ (on), 1mJ (off), Test Condition: 400V, 75A, 16Ohm, 15V, Gate Charge: 54 nC, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 312 W.

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RBN75H65T1FPQ-A0#CB0 Виробник : Renesas Electronics REN_r07ds1383ej0120_rbn75h65t1fpqa0_DST_20200803-3075650.pdf IGBT Transistors POWER TRS1
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