RBQ20BM65AFHTL ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.26 грн |
| 10+ | 63.35 грн |
| 100+ | 48.19 грн |
| 250+ | 48.12 грн |
| 500+ | 39.42 грн |
| 1000+ | 34.59 грн |
| 2500+ | 31.69 грн |
Відгуки про товар
Написати відгук
Технічний опис RBQ20BM65AFHTL ROHM Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-252, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 65 V, Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 65 V.
Інші пропозиції RBQ20BM65AFHTL за ціною від 51.23 грн до 98.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RBQ20BM65AFHTL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE (AEC-Q101Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 65 V |
на замовлення 954 шт: термін постачання 21-31 дні (днів) |
|
| RBQ20BM65AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 65 V
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 65 V
на замовлення 954 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.63 грн |
| 10+ | 84.73 грн |
| 100+ | 66.08 грн |
| 500+ | 51.23 грн |



