RBR10BGE60ATL

RBR10BGE60ATL Rohm Semiconductor


datasheet?p=RBR10BGE60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Виробник: Rohm Semiconductor
Description: 60V, 10A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 2287 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+99.16 грн
10+ 84.97 грн
100+ 66.24 грн
500+ 51.35 грн
1000+ 40.54 грн
Мінімальне замовлення: 3
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Технічний опис RBR10BGE60ATL Rohm Semiconductor

Description: 60V, 10A, TO-252, CATHODE COMMON, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-252GE, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A, Current - Reverse Leakage @ Vr: 200 µA @ 60 V.

Інші пропозиції RBR10BGE60ATL

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
RBR10BGE60ATL RBR10BGE60ATL Виробник : Rohm Semiconductor datasheet?p=RBR10BGE60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 60V, 10A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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