RBR10BGE60ATL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: DIODE ARR SCHOTT 60V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 2279 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 151.20 грн |
| 10+ | 92.80 грн |
| 100+ | 62.79 грн |
| 500+ | 46.83 грн |
| 1000+ | 42.95 грн |
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Технічний опис RBR10BGE60ATL Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO252GE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-252GE, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A, Current - Reverse Leakage @ Vr: 200 µA @ 60 V.
Інші пропозиції RBR10BGE60ATL
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RBR10BGE60ATL | Виробник : Rohm Semiconductor |
Description: DIODE ARR SCHOTT 60V 10A TO252GE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
товару немає в наявності |