RBV1010 EIC SEMICONDUCTOR INC.
Виробник: EIC SEMICONDUCTOR INC.
Description: BRIGDE RECTIFIER 10A 1000V, CASE
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: RBV-25
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, RBV-25
Packaging: Bag
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Технічний опис RBV1010 EIC SEMICONDUCTOR INC.
Description: BRIGDE RECTIFIER 10A 1000V, CASE, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A, Current - Average Rectified (Io): 10 A, Voltage - Peak Reverse (Max): 1 kV, Part Status: Active, Supplier Device Package: RBV-25, Technology: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, RBV-25, Packaging: Bag.