Продукція > ROHM SEMICONDUCTOR > RCD100N19TL
RCD100N19TL

RCD100N19TL Rohm Semiconductor

datasheet?p=RCD100N19&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 190V 10A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 190 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1108 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+99.41 грн
10+78.15 грн
100+60.79 грн
500+48.35 грн
1000+39.39 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис RCD100N19TL Rohm Semiconductor

Description: MOSFET N-CH 190V 10A CPT3, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 190 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: CPT3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 850mW (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Інші пропозиції RCD100N19TL

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
RCD100N19TL RCD100N19TL Rohm Semiconductor datasheet?p=RCD100N19&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 190V 10A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 190 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
RCD100N19TL RCD100N19TL ROHM Semiconductor rcd100n19-e-1018290.pdf MOSFET 4V Drive Nch Power MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
RCD100N19TL datasheet?p=RCD100N19&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCD100N19TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 190V 10A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 190 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
RCD100N19TL rcd100n19-e-1018290.pdf
RCD100N19TL
Виробник: ROHM Semiconductor
MOSFET 4V Drive Nch Power MOSFET
товару немає в наявності
В кошику  од. на суму  грн.