на замовлення 601 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 138.76 грн |
| 10+ | 91.77 грн |
| 100+ | 53.15 грн |
| 500+ | 43.59 грн |
| 1000+ | 36.74 грн |
| 2000+ | 31.99 грн |
| 5000+ | 31.54 грн |
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Технічний опис RCJ120N20TL ROHM Semiconductor
Description: MOSFET N-CH 200V 12A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 325mOhm @ 6A, 10V, Power Dissipation (Max): 1.56W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5.25V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V.
Інші пропозиції RCJ120N20TL за ціною від 139.25 грн до 139.25 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
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RCJ120N20TL | Виробник : Rohm Semiconductor |
 Description: MOSFET N-CH 200V 12A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 325mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| RCJ120N20TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK Case: D2PAK Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Gate charge: 15nC On-state resistance: 790mΩ Drain current: 12A Gate-source voltage: ±30V Pulsed drain current: 48A Power dissipation: 52W Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: reel; tape кількість в упаковці: 1 шт |
товару немає в наявності |
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RCJ120N20TL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 200V 12A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 325mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
товару немає в наявності |
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| RCJ120N20TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK Case: D2PAK Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Gate charge: 15nC On-state resistance: 790mΩ Drain current: 12A Gate-source voltage: ±30V Pulsed drain current: 48A Power dissipation: 52W Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: reel; tape |
товару немає в наявності |