RCJ120N25TL Rohm Semiconductor

Description: MOSFET N-CH 250V 12A LPT, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 1.56W (Ta), 107W (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).