RCJ451N20TL Rohm Semiconductor
| Кількість | Ціна |
|---|---|
| 48+ | 293.57 грн |
| 53+ | 268.04 грн |
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Технічний опис RCJ451N20TL Rohm Semiconductor
Description: 200V 45A, NCH, TO-263S, POWER MO, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V, Power Dissipation (Max): 1.56W (Ta), 211W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V.
Інші пропозиції RCJ451N20TL за ціною від 97.36 грн до 305.89 грн
| Фото | Назва | Виробник | Інформація |
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RCJ451N20TL | Виробник : ROHM Semiconductor |
 MOSFETs 200V 45A, Nch, TO-263S, Power MOSFET |
на замовлення 1908 шт: термін постачання 21-30 дні (днів) |
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| RCJ451N20TL | Виробник : Rohm Semiconductor |
Description: 200V 45A, NCH, TO-263S, POWER MO Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Power Dissipation (Max): 1.56W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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| RCJ451N20TL | Виробник : Rohm Semiconductor |
Description: 200V 45A, NCH, TO-263S, POWER MO Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Power Dissipation (Max): 1.56W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
товару немає в наявності |