| Кількість | Ціна |
|---|---|
| 1+ | 433.21 грн |
| 10+ | 383.34 грн |
| 100+ | 273.57 грн |
| 500+ | 232.78 грн |
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Технічний опис RCJ700N20TL ROHM Semiconductor
Description: MOSFET N-CH 200V 70A LPTS, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 1.56W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc).
Інші пропозиції RCJ700N20TL за ціною від 173.39 грн до 451.75 грн
| Фото | Назва | Виробник | Інформація |
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RCJ700N20TL | Rohm Semiconductor |
 Description: MOSFET N-CH 200V 70A LPTSPackage / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 926 шт: термін постачання 21-31 дні (днів) |
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| RCJ700N20TL |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 70A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 200V 70A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 926 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 451.75 грн |
| 10+ | 294.08 грн |
| 25+ | 257.63 грн |
| 100+ | 203.38 грн |
| 250+ | 184.74 грн |
| 500+ | 173.39 грн |