RD3G07BATTL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: PCH -40V -70A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис RD3G07BATTL1 Rohm Semiconductor
Description: PCH -40V -70A POWER MOSFET - RD3, Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 101W (Tc), Rds On (Max) @ Id, Vgs: 7.1mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції RD3G07BATTL1 за ціною від 65.31 грн до 229.54 грн
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RD3G07BATTL1 | Rohm Semiconductor |
Description: PCH -40V -70A POWER MOSFET - RD3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 70A, 10V Power Dissipation (Max): 101W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RD3G07BATTL1 | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -70A(Id), (4.5V, 6.0V Drive) |
на замовлення 11065 шт: термін постачання 21-30 дні (днів) |
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| RD3G07BATTL1 |
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Виробник: Rohm Semiconductor
Description: PCH -40V -70A POWER MOSFET - RD3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 70A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 20 V
Description: PCH -40V -70A POWER MOSFET - RD3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 70A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.05 грн |
| 10+ | 130.80 грн |
| 100+ | 94.72 грн |
| 500+ | 73.37 грн |
| 1000+ | 68.22 грн |
| RD3G07BATTL1 |
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Виробник: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -70A(Id), (4.5V, 6.0V Drive)
MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -70A(Id), (4.5V, 6.0V Drive)
на замовлення 11065 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.54 грн |
| 10+ | 147.66 грн |
| 100+ | 88.36 грн |
| 500+ | 71.80 грн |
| 1000+ | 69.72 грн |
| 2500+ | 65.31 грн |