RD3G500GNTL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V
на замовлення 758 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 124.59 грн |
| 10+ | 90.73 грн |
| 100+ | 65.99 грн |
| 500+ | 51.23 грн |
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Технічний опис RD3G500GNTL Rohm Semiconductor
Description: MOSFET N-CH 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V.
Інші пропозиції RD3G500GNTL за ціною від 48.93 грн до 132.62 грн
| Фото | Назва | Виробник | Інформація |
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RD3G500GNTL | Виробник : ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 40V(Vdss), 50.0A(Id), (4.5V Drive) |
на замовлення 1674 шт: термін постачання 21-30 дні (днів) |
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| RD3G500GNTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252 On-state resistance: 6.3mΩ Case: DPAK; TO252 Gate-source voltage: ±20V Power dissipation: 35W Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 100A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 31nC кількість в упаковці: 2500 шт |
товару немає в наявності |
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RD3G500GNTL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 40V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22800 pF @ 20 V |
товару немає в наявності |
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| RD3G500GNTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252 On-state resistance: 6.3mΩ Case: DPAK; TO252 Gate-source voltage: ±20V Power dissipation: 35W Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 100A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 31nC |
товару немає в наявності |