RD3H080SPFRATL Rohm Semiconductor

Description: MOSFET P-CH 45V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V.