RD3H080SPTL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 8A TO252
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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Технічний опис RD3H080SPTL1 Rohm Semiconductor
Description: MOSFET P-CH 45V 8A TO252, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 15W (Tc), Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції RD3H080SPTL1 за ціною від 34.56 грн до 124.76 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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RD3H080SPTL1 | Rohm Semiconductor |
Description: MOSFET P-CH 45V 8A TO252 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
на замовлення 2590 шт: термін постачання 21-31 дні (днів) |
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RD3H080SPTL1 | ROHM Semiconductor |
MOSFET Pch -45V -8A TO-252(DPAK) |
на замовлення 3316 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RD3H080SPTL1 |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 8A TO252
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: MOSFET P-CH 45V 8A TO252
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.76 грн |
| 10+ | 76.26 грн |
| 100+ | 51.09 грн |
| 500+ | 37.82 грн |
| 1000+ | 34.56 грн |
| RD3H080SPTL1 |
|
Виробник: ROHM Semiconductor
MOSFET Pch -45V -8A TO-252(DPAK)
MOSFET Pch -45V -8A TO-252(DPAK)
на замовлення 3316 шт:
термін постачання 21-30 дні (днів)