RD3P08BBDTL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 80A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 119W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 97.47 грн |
| 5000+ | 90.33 грн |
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Технічний опис RD3P08BBDTL Rohm Semiconductor
Description: MOSFET N-CH 100V 80A TO252, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 119W (Ta), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції RD3P08BBDTL за ціною від 77.32 грн до 258.53 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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RD3P08BBDTL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 80A TO252 Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 119W (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 9836 шт: термін постачання 21-31 дні (днів) |
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RD3P08BBDTL | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 80A(Id), (6.0V Drive) |
на замовлення 2102 шт: термін постачання 21-30 дні (днів) |
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| RD3P08BBDTL |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 80A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 119W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 80A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 119W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 9836 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.90 грн |
| 10+ | 172.83 грн |
| 100+ | 137.62 грн |
| 500+ | 109.27 грн |
| 1000+ | 92.72 грн |
| RD3P08BBDTL |
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Виробник: ROHM Semiconductor
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 80A(Id), (6.0V Drive)
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 80A(Id), (6.0V Drive)
на замовлення 2102 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.53 грн |
| 10+ | 167.51 грн |
| 100+ | 101.48 грн |
| 500+ | 82.84 грн |
| 1000+ | 77.32 грн |