RD3P200SNTL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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Технічний опис RD3P200SNTL1 Rohm Semiconductor
Description: ROHM - RD3P200SNTL1 - Leistungs-MOSFET, n-Kanal, 100 V, 20 A, 0.046 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 20A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.5V, euEccn: NLR, Verlustleistung: 20W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.046ohm, SVHC: Lead (23-Jan-2024).
Інші пропозиції RD3P200SNTL1 за ціною від 53.23 грн до 166.20 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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RD3P200SNTL1 | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 20.0A(Id), (2.5V, 4.0V Drive) |
на замовлення 11957 шт: термін постачання 21-30 дні (днів) |
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RD3P200SNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 100V 20A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 6980 шт: термін постачання 21-31 дні (днів) |
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| RD3P200SNTL1 |
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Виробник: ROHM Semiconductor
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 20.0A(Id), (2.5V, 4.0V Drive)
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 20.0A(Id), (2.5V, 4.0V Drive)
на замовлення 11957 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.78 грн |
| 10+ | 97.65 грн |
| 100+ | 69.72 грн |
| 500+ | 62.34 грн |
| 1000+ | 57.37 грн |
| 2500+ | 53.23 грн |
| RD3P200SNTL1 |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 100V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 6980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.20 грн |
| 10+ | 143.59 грн |
| 100+ | 115.41 грн |
| 500+ | 88.99 грн |
| 1000+ | 73.73 грн |