RD3R02BBHTL1 Rohm Semiconductor

Description: NCH 150V 20A, TO-252, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 81mOhm @ 10A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 75 V.