на замовлення 1547 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 182.21 грн |
| 10+ | 138.43 грн |
| 100+ | 87.61 грн |
| 250+ | 86.85 грн |
| 500+ | 71.69 грн |
| 1000+ | 68.26 грн |
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Технічний опис RD3S100CNTL1 ROHM Semiconductor
Description: MOSFET N-CH 190V 10A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 190 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
Інші пропозиції RD3S100CNTL1 за ціною від 160.07 грн до 185.43 грн
| Фото | Назва | Виробник | Інформація |
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RD3S100CNTL1 | Виробник : Rohm Semiconductor |
 Description: MOSFET N-CH 190V 10A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 190 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 85 шт: термін постачання 21-31 дні (днів) |
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RD3S100CNTL1 | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 190V 10A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 190 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
товару немає в наявності |
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| RD3S100CNTL1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 10A Pulsed drain current: 40A Power dissipation: 85W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |