на замовлення 1271 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 164.84 грн |
| 10+ | 112.49 грн |
| 100+ | 78.41 грн |
| 500+ | 65.60 грн |
| 1000+ | 56.21 грн |
| 2500+ | 51.70 грн |
Відгуки про товар
Написати відгук
Технічний опис RDD050N20TL ROHM Semiconductor
Description: MOSFET N-CH 200V 5A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: CPT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V.
Інші пропозиції RDD050N20TL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
RDD050N20TL | Виробник : Rohm Semiconductor |
 Description: MOSFET N-CH 200V 5A CPT3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V |
товару немає в наявності |
|
|
|
RDD050N20TL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 200V 5A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V |
товару немає в наявності |