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RDD050N20TL

RDD050N20TL ROHM Semiconductor

rohm semiconductor_rohms10729-1.pdf
Виробник: ROHM Semiconductor
MOSFETs Nch; 20W; 200V; 5A
на замовлення 1271 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
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100+71.03 грн
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Технічний опис RDD050N20TL ROHM Semiconductor

Description: MOSFET N-CH 200V 5A CPT3, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: CPT3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.

Інші пропозиції RDD050N20TL

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Ціна
RDD050N20TL RDD050N20TL Rohm Semiconductor RDD050N20.pdf Description: MOSFET N-CH 200V 5A CPT3
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
товару немає в наявності
В кошику  од. на суму  грн.
RDD050N20TL RDD050N20TL Rohm Semiconductor RDD050N20.pdf Description: MOSFET N-CH 200V 5A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
RDD050N20TL RDD050N20.pdf
RDD050N20TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 5A CPT3
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
товару немає в наявності
В кошику  од. на суму  грн.
RDD050N20TL RDD050N20.pdf
RDD050N20TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 5A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.