на замовлення 48 шт:
термін постачання 2-3 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 63.98 грн |
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Технічний опис RDN100N20 ROHM
Description: MOSFET N-CH 200V 10A TO220FN, Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220FN, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Інші пропозиції RDN100N20
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
RDN100N20 | Rohm Semiconductor |
 Description: MOSFET N-CH 200V 10A TO220FNInput Capacitance (Ciss) (Max) @ Vds: 543 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FN Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
 |
RDN100N20 | ROHM Semiconductor |
MOSFET Trans MOSFET N-CH 200V 10A 3-Pin(3+Tab) TO-220FN Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| RDN100N20 |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 10A TO220FN
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FN
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 200V 10A TO220FN
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FN
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| RDN100N20 |
|
Виробник: ROHM Semiconductor
MOSFET Trans MOSFET N-CH 200V 10A 3-Pin(3+Tab) TO-220FN Bulk
MOSFET Trans MOSFET N-CH 200V 10A 3-Pin(3+Tab) TO-220FN Bulk
товару немає в наявності
В кошику
од. на суму грн.